New technology for High Electron Mobility Transistor will make India self-reliant
Scientists from Bangalore have developed a highly reliable, High Electron Mobility Transistor (HEMTs) that is a normally OFF device and can switch currents up to 4A and operates at 600V. This first-ever indigenous HEMT device made from gallium nitride (GaN) is useful in electric cars, locomotives, power transmission and other areas requiring high voltage and high-frequency switching would reduce the cost of importing such stable and efficient transistors required in power electronics.